磁流变抛光过程中，会出现分子团聚的现象，分子团聚会严重影响到晶圆表面质

In the process of magnetorheological polishing, the phenomenon of molecular agglomeration will occur, and the molecular mass gathering will seriously affect the surface quality of the wafer. To a certain extent, it can be understood that the molecular reunion is that the particle size of the abrasive particles becomes larger. In the case of a certain depth, as the particle size of the abrasive particles increases, the scratch width increases. The amount of scratch uplift is the difference between the highest position of the gallium arsenide atom in the z direction and the highest atom position of its initial surface after the scratching process. The amount of scratch bulge presents a trend of increasing first and then decreasing. When the abrasive grain diameter is 6 nm, the amount of scratch bulge reaches the maximum value. The way in which the uplifted atoms stack up is also different.

In the process of magnetic rinsing, the phenomenon of molecular reunion will appear, and molecular reunion will seriously affect the surface quality of the wafer. To a certain extent, it is understood that molecular reunion is a larger particle size. In the case of a certain depth, the width of the scratch essand increases as the particle size increases. After the scratch uplift is the scratch process, the difference between the highest position of the z-level arsenide atom and the highest atomic position of its initial surface. The number of scratches increases and then decreases, and the scratch bulge reaches a maximum when the grinding grain diameter is 6nm. The way the bulge atoms accumulate is also different.

In the process of MRF polishing, there will be the phenomenon of molecular aggregation, which seriously affects the surface quality of wafer. To some extent, it can be understood that the aggregation of molecules is the increase of the size of abrasive particles. When the depth is fixed, the scratch width increases with the increase of the particle size. The amount of scratch protrusion is the difference between the highest position of GaAs atom in Z direction and the highest position of the initial surface after scratch. When the diameter of abrasive particles is 6nm, the amount of scratch bulge reaches the maximum. There are also different stacking patterns of the bulged atoms.<br>