通过系统研究H2O2浓度对纳米金属铜粒子的沉积及刻蚀行为的影响，进一步

By systematically studying the influence of H2O2 concentration on the deposition and etching behavior of nano-metal copper particles, further study its influence on the etching morphology of the silicon wafer surface. The research results show that the concentration of hydrogen peroxide controls the density and residence time of the nano-metal copper particles deposited on the surface of the silicon wafer, and ultimately affects whether the silicon etching process is micro-pit etching (dispersed copper particles) or overall etching (dense copper) membrane). At the same time, with the addition of H2O2, the etching rate first increases, then decreases and finally stabilizes. The etching process will lead to four stages of structural evolution. By studying the mechanism of copper catalyzed chemical etching and the influence of H2O2 concentration changes at different temperatures on the etching morphology, reflectivity, and etching rate of silicon wafers, the appropriate reaction rate (0.23μm/min) and low silicon wafer thinning were selected (3.5μm), to achieve the preparation of a uniform inverted pyramid structure on the diamond wire cut n-type single crystal silicon wafer and show excellent anti-reflection performance (R: 7.2%).

The influence of H2O2 concentration on the deposition and etching behavior of nanometallic copper particles is studied systematically, and the law of its influence on the etching of the surface of silicon wafers is further studied. The results show that the concentration of hydrogen peroxide controls the degree and dwell time of the deposition of nanometallic copper particles on the surface of the wafer, and ultimately affects whether the silicon etching process is micro-zone pit etching (dispersed copper particles) or overall etching (dense copper film). At the same time, with the addition of H2O2, the etching rate is first raised and then lowered and eventually leveled off, and the etching process will lead to the structural evolution of the four stages. By studying the effects of copper catalytic chemical etching and changes in H2O2 concentration at different temperatures on the shapeform, reflectivity and etching rate of silicon for a moment, the appropriate reaction rate (0.23 m/min) and low silicon sheet thinning (3.5 m) were selected to achieve uniform inverted pyramid structure preparation and excellent reflective performance (R:7.2%) on the gold-cut n-type monocrystalline silicon wafer.

The influence of H2O2 concentration on the deposition and etching behavior of copper nanoparticles was systematically studied, and the influence of H2O2 concentration on the etching morphology of silicon wafer was further studied. The results show that the concentration of hydrogen peroxide controls the density and residence time of nano copper particles deposited on the surface of silicon wafer, and ultimately affects the etching process of silicon: Micro pit etching (dispersed copper particles) or overall etching (dense copper film). At the same time, with the addition of H2O2, the etching rate first increases, then decreases, and finally tends to be stable. The etching process will lead to four stages of structural evolution. The mechanism of copper catalyzed chemical etching and the influence of H2O2 concentration at different temperatures on the etching morphology, reflectivity and etching rate of silicon wafers were studied. The uniform inverted pyramid structure was fabricated on n-type single crystal silicon wafer by WEDM with appropriate reaction rate (0.23 μ M / min) and low wafer thinning amount (3.5 μ m), and excellent antireflection performance (R: 7.2%) was achieved.