These P-Channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fastswitching speed and ruggedized device design that HEXFET®power MOSFETs are well known for, provides the designer withan extremely efficient and reliable device for use in battery andload management.A thermally enhanced large pad leadframe has beenincorporated into the standard SOT-23 package to produce aHEXFET Power MOSFET with the industry's smallest footprint.This package, dubbed the Micro3™, is ideal for applicationswhere printed circuit board space is at a premium. The lowprofile (