5.结论本文中，运用分子动力学方法模拟来研究划擦过程，砷化镓材料表面划

5. Conclusion In <br>this paper, molecular dynamics simulation is used to study the scratching process and the formation of scratches on the surface of gallium arsenide materials, and to understand the formation process of gallium arsenide scratches under different factors. Using scratch depth, scratch bulge and average friction coefficient as evaluation indicators to explore the processing parameters to reduce the formation of scratches. <br>1. During the magnetorheological polishing process, the abrasive particle size, normal load and GaAs anisotropy all affect the formation of surface scratches. In order to reduce the formation of scratches, a larger abrasive particle size and a smaller normal load should be selected. At the same time, attention must be paid to meet the requirements of processing efficiency. <br>2. In the simulation process, the scratch speed has little effect on the formation of scratches. <br>3. In the process of processing, it is necessary to appropriately select the GaAs crystal plane and the processing direction of the abrasive grains. On the premise of meeting the requirements for use, choose two scratch directions close to the (111) crystal plane and 45 ° and 135 °.

5.Conclusions<br>In this paper, molecular dynamics method simulation is used to study the scratching process, the formation of the surface scratches of gallium arsenide material, and to gain a deeper understanding of the formation of gallium arsenide scratches under different factors. The processing process parameters of reducing scratch formation are investigated by using scratch depth, scratch bulge and average coefficient of friction as evaluation indicators.<br>1. In the process of magnetic rheo-polishing, the grinding particle size, the mesotropic load and the anisotropy of GaAs will affect the formation of surface scratches. In order to reduce the formation of scratches, we should choose a larger grinding particle size, a smaller method load, but also pay attention to meet the needs of processing efficiency.<br>2. During the simulation process, the scratch speed has less effect on the formation of scratches.<br>3. In the process of processing, to select the proper processing direction of GaAs crystal surface and grinding grain. On the premise that the use requirements are met, choose two scratch directions close to (111) crystal surface and 45 degrees, 135 degrees.

5. Conclusion<br>In this paper, molecular dynamics simulation is used to study the scratch process, the formation of gallium arsenide scratches, and the formation process of gallium arsenide scratches under different factors. The processing parameters of reducing scratch formation were studied by taking scratch depth, scratch protrusion and average friction coefficient as evaluation indexes.<br>1. In the process of MRF polishing, abrasive particle size, normal load and anisotropy of GaAs all affect the formation of scratch. In order to reduce the formation of scratches, it is necessary to choose a larger particle size, a smaller normal load, and at the same time to meet the requirements of machining efficiency.<br>2. In the simulation process, scratch speed has little effect on scratch formation.<br>3. In the process of processing, the processing direction of GaAs crystal surface and abrasive should be properly selected. On the premise of meeting the use requirements, two scratch directions, i.e. near (111) crystal surface and 45 ° and 135 ° are selected.<br>