An all-inorganic flexible ferroelectric field effect transistors (FeFET) based on epitaxial Pb(Zr0.1Ti0.9)O3/ZnO heterostructure on mica substrate is developed, which not only operates under a small voltage and thus consumes low power, but also shows robust FeFET performance under large bending deformation , extended bending cycling cycles, and high temperature operation at 200 ℃.