在两种不同原始形貌的单晶硅表面稳定制备出多组倒金字塔结构（来源于不同线

Multiple groups of inverted pyramid structures (derived from the cutting process of different wire diameters) are stably prepared on the surface of two single crystal silicon with different original morphologies, and the silicon wafer is thinned to less than 5μm.

Stable preparation of multiple sets of inverted pyramid structures (from different wire diameter cutting processes) on two monocrystalline silicon surfaces of different original forms, and the thinning of the wafers is less than 5 m.

Several groups of inverted pyramids (from different wire diameter cutting processes) were stably fabricated on two kinds of monocrystalline silicon surfaces with different original morphologies, and the wafer thickness was less than 5 μ M,<BR>