空穴浓度随f的增加而略有增加，这可能是由于界面缺陷，如悬垂键和反位缺陷

The hole concentration increases slightly with increasing f, which may be due to interfacial defects such as dangling bonds and anti-position defects, and the increase in hole concentration in the composite sample (f0.3wt.%) may be due to Increases, more interface defects are formed, and as f increases further, the hole concentration decreases due to the agglomeration of GaAs particles.

The cavity concentration increases slightly with the increase of f, which may be due to interface defects, such as overhanging key and inverse defects, and the increase in the concentration of hollows in composite samples (f.3wt.%) may be due to the increase in The increase of GaAs content, resulting in more interface defects, with the further increase of f, due to the reuniting of GaAs particles, the cavity concentration decreases.

The hole concentration increases slightly with the increase of F, which may be due to interface defects, such as dangling bonds and Antiposition defects, and the increase of hole concentration (f  0.3wt.%) in the composite samples may be due to the formation of more interface defects with the increase of GaAs content. With the further increase of F, the hole concentration decreases due to the agglomeration of GaAs particles.