相同压入深度条件下，GaAs表面会出现弹性回复现象。尤其是在加工尺度较

Under the same pressing depth, elastic recovery will occur on the GaAs surface. Especially when the processing scale is small, the elastic recovery rate of the material is greater. Therefore, this paper first calculates the actual width of the scratch after the simulation. In order to reduce the influence of the error on the simulation results, three scratches were selected from each of the five scratch directions of the three wafers, three cross sections were calculated, the depth value of each cross section was calculated, and the average value of the depths of the three wafers was calculated Solve the three scratches and find the average value of the depth of the scratches. As shown in FIG. 12, it is a certain cross-sectional view of the simulation result of the scratch of the (100) (111) 2 ° wafer in the 0 direction. The three cross-sections in the scratching process are taken, and then the scratch depth of the crystal plane on different crystal phases is obtained, and the average value is obtained. The results are shown in Table 4 below.

Under the same pressure-in depth condition, the GaAs surface will experience elastic recovery. Especially when the processing scale is small, the elastic response rate of the material is greater. Therefore, this paper first calculates the actual width of the scratch after the simulation is over. In order to reduce the impact of error on the simulation results, each scratch in the five scratch directions of three wafers is selected to intercept three sections, calculate the depth value of each section, then calculate the average of the three wafer depths, and solve the three scratches to obtain the average of the scratch depth. Figure 12 shows a section of the 0-way scratch simulation result of the (100) bias (111) 2-degree wafer. Intercept the three sections in the process of scratching, then take the crystal surface scratch depth on the different crystal phase, and seek the average, the result is shown in Table 4 below.

At the same indentation depth, the elastic recovery of GaAs surface appears. Especially when the processing scale is small, the elastic recovery rate of the material is larger. Therefore, this paper first calculates the actual scratch width after the simulation. In order to reduce the influence of the error on the simulation results, three sections are cut from each scratch in five scratch directions of three kinds of chips, the depth value of each section is calculated, and then the average value of the depth of three kinds of chips is calculated, and the average value of the scratch depth is obtained by solving the three scratches. As shown in Figure 12, a cross-section of scratch simulation results in the 0-direction of (100) bias (111) 2 ° wafer is shown. Cut the three sections in the scratch process, and then calculate the scratch depth of the crystal surface on different crystal phases, and calculate the average value. The results are shown in Table 4 below.<br>