电化学沉积法是将特定的前躯体溶液作电解液，在一定的电流作用下发生反应，

The electrochemical deposition method uses a specific precursor solution as an electrolyte to react under a certain current, and then grows a carbon nitride film on the substrate. In 1999, Cao et al. Used acetonitrile as the electrolyte and electrochemically deposited a carbon nitride film with an N / C of about 0.25 after 8 hours of electrochemical deposition under the conditions of a temperature of 50 ° C and a voltage of 1.00KV. Then the acetone solution of dicyandiamide was used as the electrolyte. A carbon nitride film with an N / C of 0.48 was obtained at a voltage of 1.00-1.50V, and it was concluded that the electrolyte and the substrate Structure and performance have a clear impact. At the same time, the research group selected melamine chloride and melamine solution as electrolytes, and successfully synthesized C3N4 thin film on Si substrate at 25 ℃ and high pressure of 12.00KV. Compared with other synthetic methods, although the carbon nitride produced is relatively low, it has the following two advantages: ① simple reaction equipment; ② simple process, and easy to scale up and industrialization.

Electrochemical deposition is the electrolyte of a specific pre-body solution, which reacts under a certain current action, and then grows a carbon nitride film on the substrate. In 1999, Cao and other acetylene as electrolyte, at a temperature of 50 degrees C, voltage 1.00KV after 8 hours of electrochemical deposition of N/C about 0.25 carbon nitride film. Subsequently, the acetone solution of double cyanamide was used as an electrolyte, and at 1.00-1.50V, n/C was obtained with a carbon nitride film of 0.48, and it was concluded that the electrolyte and substrate had a significant effect on the structure and performance of the nitride film. At the same time, the team selected melamine chlorine and melamine solution as electrolyte, and successfully synthesized C3N4 film on the Si substrate at high pressure of 25 degrees C and 12.00KV. Compared with other synthesis methods, although the prepared carbon carbon nitrogen nitride is relatively low, it has two advantages: (1) the reaction equipment is simple;

The electrochemical deposition method uses a specific precursor solution as the electrolyte, which reacts under the action of a certain current, and then grows a carbon nitride film on the substrate. In 1999, Cao et al. Electrodeposited carbon nitride film with acetonitrile as electrolyte at 50 ℃ and 1.00kv for 8 hours, and then obtained carbon nitride film with N / C of about 0.25. Then, we use dicyandiamide acetone solution as electrolyte, and obtain carbon nitride film with N / C of 0.48 at the voltage of 1.00-1.50v. It is concluded that electrolyte and substrate have obvious influence on the structure and properties of carbon nitride film. At the same time, the group selected cyanuric chloride and melamine solution as electrolyte, and successfully synthesized C3N4 film on Si substrate at 25 ℃ and 12.00kv high pressure. Compared with other synthesis methods, although the prepared carbon nitride nitrogen is relatively low, it has the following two advantages: ① simple reaction equipment; ② simple process, and easy to scale up and industrialization.<br>