样品绒面浮硅大部分被去除,少部分尖锐浮硅覆盖在其表面,结构较为均匀,样品初步得到净化。增加圆滑处理时间至10s,悬浮在绒面的硅屑几乎被去除,的英语翻译

样品绒面浮硅大部分被去除,少部分尖锐浮硅覆盖在其表面,结构较为均匀,样

样品绒面浮硅大部分被去除,少部分尖锐浮硅覆盖在其表面,结构较为均匀,样品初步得到净化。增加圆滑处理时间至10s,悬浮在绒面的硅屑几乎被去除,扫描电镜区域范围只有少部分浮硅,绒面均匀性良好。继续增加圆滑处理时间至20s,浮硅完全被去除,由于KOH可与硅表面发生剧烈腐蚀,绒面浅层硅部分被反应,样品表面金字塔阵列结构遭到破坏,微结构较为尖锐。当圆滑处理时间增加至30s时,样品绒面进一步被腐蚀,绒面尖锐结构完全被腐蚀故比较圆滑。该刻蚀整个过程KOH圆滑体系具有良好圆滑潜质,且反应时间很短并能有效提升样品制绒质量。
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源语言: -
目标语言: -
结果 (英语) 1: [复制]
复制成功!
Most of the suede floating silicon of the sample was removed, and a small part of the sharp floating silicon covered its surface, the structure was relatively uniform, and the sample was initially purified. Increasing the smooth processing time to 10s, the silicon chips suspended on the suede are almost removed, and only a small part of the silicon floats in the scanning electron microscope area, and the uniformity of the suede is good. Continue to increase the smooth processing time to 20s, the floating silicon is completely removed, because KOH can violently corrode with the silicon surface, the shallow silicon portion of the suede is reacted, the sample surface pyramid array structure is destroyed, and the microstructure is sharper. When the rounding treatment time is increased to 30s, the sample suede is further corroded, and the sharp structure of the suede is completely corroded, so it is relatively smooth. The KOH smoothing system has a good smoothing potential during the entire etching process, and the reaction time is very short and can effectively improve the quality of the samples.
正在翻译中..
结果 (英语) 2:[复制]
复制成功!
Most of the sample suede polysemeline was removed, a small number of sharp polysilicon covered on its surface, the structure is more uniform, the sample was initially purified. Increasethed smooth treatment time to 10s, suspended on the velvet silicon chips are almost removed, the scanning mirror area range is only a small number of flotsam, the suede uniformity is good. Continue to increase the smooth treatment time to 20s, floating silicon is completely removed, due to KOH can be severely corroded with the silicon surface, the lint shallow silicon part is reacted, the sample surface pyramid array structure is damaged, the microstructure is more sharp. When the smooth treatment time is increased to 30s, the sample suede is further corroded, and the sharp structure of the suede is completely corroded. The etching process KOH sleek system has good sleek potential, and the reaction time is very short and can effectively improve the quality of sample velvet.
正在翻译中..
结果 (英语) 3:[复制]
复制成功!
Most of the suede floating silicon was removed, and a few sharp floating silicon was covered on the surface of the sample. The structure of the sample was relatively uniform, and the sample was preliminarily purified. When the sleek treatment time is increased to 10s, the silicon chips suspended on the pile surface are almost removed, and only a small part of the floating silicon is in the scope of SEM, and the pile surface has good uniformity. As the KOH can corrode the silicon surface violently, the shallow layer of silicon on the pile surface is reacted, the pyramid array structure on the sample surface is destroyed, and the microstructure is relatively sharp. When the slenderness treatment time increased to 30s, the pile surface of the sample was further corroded, and the sharp structure of the pile surface was completely corroded, so it was relatively sleek. The whole etching process KOH smooth system has a good smooth potential, and the reaction time is very short and can effectively improve the quality of the sample.<BR>
正在翻译中..
 
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