The a-MoO3 crystals were grown on S

The a-MoO3 crystals were grown on Si(1 0 0) substrate from molybdenum oxide vapor at hot zone temperature T¼660 1C by t¼7.2–25.2 ks. Just before the experiment the Si(1 0 0) substrate was subjected to RCA cleaning in diluted HF acid to remove a layer of native oxide [33]. Initially purified molybdenum oxide (99.99%) was used as a source. Crystal growth was produced in horizontal nonflowing tube open-type quartz reactor. A molybdenum oxide charge of1 g in weight was positioned into most hot closed corner of reactor. Molybdenum oxide mass transfer is provided by temperature gradient from closed to open end of the reactor. Siliconsubstrate with 1 cm2 area was positioned by 0.8 cm away the molybdenum oxide charge. As a result of growing, white transparent platelet crystals with dimensions of 1000 200 0.4 mm3 were found on Si substrate and adjacent reactor walls. Micromorphology and chemical composition of the crystals were evaluated with SEM and EPMA by LEO 1430 device.

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结果 (简体中文) 1: [复制]

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在热区温度T¼6601C下，t-7.2-25.2 ks使氧化钼蒸气在Si（1 0 0）衬底上生长了a-MoO3晶体。在实验即将进行之前，将Si（1 0 0）衬底在稀HF酸中进行RCA清洁，以去除自然氧化物层[33]。最初纯化的氧化钼（99.99％）用作来源。在卧式非流动管式开放式石英反应器中产生晶体生长。将重量为〜1g的氧化钼装料放入反应器的最热的封闭角落。通过从反应器的封闭端到开口端的温度梯度来提供氧化钼的传质。硅<br>将面积为1 cm2的衬底放置在距氧化钼装料0.8 cm处。作为生长的结果，尺寸为？1000？白色的透明透明血小板晶体。200？在Si衬底和相邻的反应器壁上发现0.4mm 3。用LEO 1430装置用SEM和EPMA对晶体的微观形貌和化学组成进行了评估。

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结果 (简体中文) 2:[复制]

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The a-MoO3 crystals were grown on Si(1 0 0) substrate from molybdenum oxide vapor at hot zone temperature T¼660 1C by t¼7.2–25.2 ks. Just before the experiment the Si(1 0 0) substrate was subjected to RCA cleaning in diluted HF acid to remove a layer of native oxide [33]. Initially purified molybdenum oxide (99.99%) was used as a source. Crystal growth was produced in horizontal nonflowing tube open-type quartz reactor. A molybdenum oxide charge of1 g in weight was positioned into most hot closed corner of reactor. Molybdenum oxide mass transfer is provided by temperature gradient from closed to open end of the reactor. Silicon<br>substrate with 1 cm2 area was positioned by 0.8 cm away the molybdenum oxide charge. As a result of growing, white transparent platelet crystals with dimensions of 1000 200 0.4 mm3 were found on Si substrate and adjacent reactor walls. Micromorphology and chemical composition of the crystals were evaluated with SEM and EPMA by LEO 1430 device.

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结果 (简体中文) 3:[复制]

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在Si（10 0）衬底上，以氧化钼蒸气为原料，在高温区温度T/4 660 1C，温度T/4 7.2～25.2ks条件下生长了a-MoO3晶体。就在实验之前，硅（10 0）基板在稀释的氢氟酸中进行RCA清洗，以去除一层天然氧化物[33]。初步纯化的氧化钼（99.99%）作为原料。在卧式无吹管开放式石英反应器中进行了晶体生长。一个重量为1g的氧化钼装药被放置在反应器最热的封闭角落。氧化钼的传质是由反应器封闭端到开放端的温度梯度提供的。硅<br>将面积为1cm~2的衬底放置在距离氧化钼电荷0.8cm处。生长的结果是，在Si衬底和邻近的反应器壁上发现了尺寸为1000~200~0.4mm3的白色反式母体血小板晶体。利用LEO 1430电子探针和扫描电镜对晶体的微观形貌和化学成分进行了分析。<br>

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