The purpose of this work is to prepare nano inverted pyramid low reflectivity suede on the surface of n-type monocrystalline silicon wafers under the premise of a mild reaction rate.
The purpose of this work is to prepare nano-inverted pyramid low reflectivity suede on the surface of n-type monocrystalline wafers with a moderate reaction rate
The purpose of this work is to prepare nano inverted pyramid textured silicon with low reflectivity on the surface of n-type single crystal silicon wafer under mild reaction rate<BR>