Vapor growth of In-doped PbTe crystals by the sublimation–condensation and vapor–liquid–solid(VLS) processes is examined. Well-faceted Pb1 – xInxTe crystals with x = 0.04–0.06 are prepared by the sublimation method. The effects of the charge composition on the facial development and growth rate in the range0 ≤ x ≤ 0.02 are discussed. The growth process at x ≥ 0.02 is shown to follow the VLS mechanism. BulkPb1 − xInxTe crystals with x ≤ 0.05 are grown by a vertical VLS process. The crystal composition is shown todepend significantly on the rate of ampule translation through the temperature field of the furnace and the separation between the evaporation and condensation zones. The longitudinal indium profiles in the crystals arecorrelated with growth kinetics.