PEDOT: PSS/c - Si heterojunction so

PEDOT: PSS/c - Si heterojunction solar cell preparation steps as follows: as shown in figure 4.2 (a) and (b), as shown in n-type silicon slice as base, first of all, the wool double alkali etching system, after cleaning the surface before and after the deposition of 5 nm eigen hydrogenated amorphous silicon (I - a - Si: H) and 10 nm n-type doped amorphous silicon thin film (n - a - Si: H), respectively, as the surface passivation layer and table games. For the formal structure, PEDOT:PSS was then coated on the other side of the wafer, and finally Ti/Ag gate electrode was prepared on the surface of PEDOT:PSS and Al was deposited on the back side as the cathode to form the battery. For the trans structure, after the deposition of amorphous silicon film, the vacuum is transferred to the sputtering chamber to deposit the transparent conductive ITO film. After being removed from the sputtering chamber, PEDOT:PSS was rotated onto the other side of the silicon chip. Finally, Ag gate electrode was prepared on the surface of ITO and Ag electrode was deposited on the surface of PEDOT:PSS to form a battery with a battery area of 10 mm×10 mm.