In conclusion, a facile architecture of visual memory arrays is designed to mimic human visual memory by integrating UV image sensor arrays and resistance switching memristors in series. The image sensor based on printed In2O3 SMWs owns a high on/off ratio of up to 104 under the UV wavelength of 350 nm and the memory device shows a large memory windowof above 102, a long-term retention of at least 1600 s and excellent bistable memory behavior after 50 switching cycles. The light distribution with patterned image can be detected and wrote in the visual memory arrays (10 × 10 pixels) by expanding the pixels densities of device arrays, and the further improvement of spatial resolution can realize the mimicry for human visual memory to capture and memory high-resolution images. The stored information of light distribution shows a long-term retention performance at least 1 week in the visual memory arrays due to the nonvolatile characteristic of resistance switching memristor. In addition, the visual memory arrays can be reprogrammed by a reset-negative voltage and reproduce the image distribution, which demonstrated the effective reusability. The design of architecture and fabrication of device arrays provide a novel approach to integrate functional sensor and memory device for the imitation of human echoic memory and haptic memory, thus creating new opportunities for the flexible visual memory device to apply in future wearable electronics, electronic eyes, multifunctional robotics, and auxiliary equipment for visually handicapped,