“溅射金属预制层再硒化、硫化”所生产的CIGSSe薄膜太阳电池是目前世

The CIGSSe thin-film solar cell produced by "sputtering metal prefabricated layer re-selenization and vulcanization" is the second-generation photovoltaic product with the most advanced technology and the most mature industrial production in the world. CIGSSe thin film is a direct band gap compound semiconductor material composed of copper, indium, selenium and other metal elements. Its absorption coefficient for visible light is the highest among all thin film battery materials, while the consumption of raw materials is much lower than that of traditional crystalline silicon solar cells. Compared with high-efficiency and high-cost crystalline silicon solar cells and low-efficiency and low-cost amorphous silicon solar cells, CIGSSe solar cells have the multiple advantages of high efficiency, low cost and long life. They are the most promising high-efficiency thin-film solar cells to reduce the cost of photovoltaic power generation. Batteries have broad development prospects. 

Cigsse thin film solar cells produced by "re selenidation and vulcanization of sputtered metal preform layer" are the second generation photovoltaic products with the most advanced technology and the most mature industrial production in the world. Cigsse thin film is a direct band gap compound semiconductor material composed of copper, indium, selenium and other metal elements. Its absorption coefficient of visible light is the highest among all thin film battery materials, but the consumption of raw materials is much lower than that of traditional crystalline silicon solar cells. Compared with crystalline silicon solar cells with high efficiency and high cost and amorphous silicon solar cells with low efficiency and low cost, cigsse solar cells have multiple advantages of high efficiency, low cost and long life. Cigsse solar cells are the most promising high-efficiency thin-film solar cells to reduce the cost of photovoltaic power generation, and have broad development prospects.

CIGSSe thin film solar cells produced by "sputtering metal prefabricated layer and then selenizing and sulfurizing" are the second generation photovoltaic products with the most advanced technology and the most mature industrial production in the world. CIGSSe thin film is a direct band gap compound semiconductor material composed of copper, indium, selenium and other metal elements. Its absorption coefficient for visible light is the highest among all thin film battery materials, but the consumption of raw materials is much lower than that of traditional crystalline silicon solar cells. Compared with crystalline silicon solar cells with high efficiency and high cost and amorphous silicon solar cells with low efficiency and low cost, CIGSSe solar cells have multiple advantages of high efficiency, low cost and long life, and are the most promising high-efficiency thin film solar cells to reduce the cost of photovoltaic power generation, and have broad development prospects.