通过实验得出结论，阴离子将极大影响铜的各向异性刻蚀行为，其中硝酸铜体系

It is concluded through experiments that anions will greatly affect the anisotropic etching behavior of copper. The moderately sized copper particles in the copper nitrate system make the reaction mild and the anisotropic etching ability fully demonstrated, which can reduce the thickness of the silicon wafer. A uniform inverted pyramid structure is formed under low volume conditions, and the average reflectivity is as low as 9.8%

It is concluded from the experiment that anions will greatly affect the anthoid etching behavior of copper, in which the moderate-sized copper particles in the copper nitrate system can fully demonstrate the gentle reaction and anthoid etching ability, and can form a uniform inverted pyramid structure under the condition of low thinning of silicon wafers, and the average reflectivity is as low as 9.8%.

The results show that anions have a great influence on the anisotropic etching behavior of copper. The moderate size copper particles in copper nitrate system make the reaction mild and fully show the anisotropic etching ability. The uniform inverted pyramid structure can be formed under the condition of low silicon wafer thinning, and the average reflectivity is as low as 9.8%