抛光过程中，如果选择的磨粒粒径相差很大，则会导致磨粒压入工件的深度也会

During the polishing process, if the size of the selected abrasive particles differs greatly, the depth of the abrasive particles pressed into the workpiece will also become larger, causing more scratches and affecting the surface quality of the wafer. When choosing a smaller polishing pressure and a smaller abrasive particle size, the generation and size of scratches can be reduced, but the processing efficiency of the polishing process will also be reduced [8] [9].

In the polishing process, if the selected particle size varies greatly, it will cause the depth of the grinding grain pressure into the workpiece will also become larger, resulting in more scratches, affecting the surface quality of the wafer. When a smaller polishing pressure is selected, the production and size of scratches can be reduced when the particle size is smaller, but the processing efficiency of the polishing process is reduced.

In the polishing process, if the selected abrasive particle size is very different, the depth of the abrasive pressing into the workpiece will become larger, causing more scratches and affecting the wafer surface quality. When smaller polishing pressure and smaller particle size are selected, the generation and size of scratch can be reduced, but the processing efficiency of polishing process will be reduced [8][9].