where tPD, tNP,tpep and tIF are the

where tPD, tNP,tpep and tIF are the relaxation times correspondingto scattering from the point defect, nanoinclusions, phononephonon interactions and interfaces, respectively. Obviously, thereduction of kL in the composite samples should be attributed to theadditional phonon scattering from nanoinclusion (tNP) and theformed phase boundaries (tIF).Previous studies [39] have confirmed that all the interfaces,whether they are grain boundaries or phase boundaries or whetherthey belong to the coherent or incoherent interfaces, can inhibit theheat flow without exception through phonon scattering in thesystem, resulting in remarkable reduction in kL. Moreover, thestudies show that the thermal conductivity depends sensitively onthe interface density (interface area per unit volume) following auniversal curve. In other words, kL reduces gradually with theincreasing interface density. Undoubtedly, the volume fraction ofphase boundaries Fp (as listed in Table 1) increase with theincreasing GNs content for f(GNs)/BiSbTe composites. As shown inFig. 8(c), it is quite clear that kL for f(GNs)/BiSbTe decreases with theincreasing Fp, which is originated from the enhanced phononscattering by the incorporated nanosheets and the phase boundaries. Anomalously, k for the 0.3 vol.% GNs/BiSbTe compositesample is larger than that of the 0.4 vol.% GNs/BiSbTe sample, whichcan be attributed to its much higher kC caused by the increase inelectrical resistivity r

0/5000

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目标语言: -

结果 (简体中文) 1: [复制]

复制成功！

其中tPD，tNP，tpep和tIF是弛豫时间，分别对应 于从点缺陷，纳米夹杂物，声子声子相互作用和界面的散射。显然， 复合样品中kL 的降低应归因于 来自纳米夹杂物（tNP）和 形成的相界（tIF）的额外声子散射。 先前的研究[39]已经证实，所有界面， 无论是晶界还是相界，或者是 属于相干界面还是非相干界面，都可以 通过 系统中的声子散射而毫无阻碍地抑制热流，从而显着降低了升而且， 研究表明，热导率敏感地取决于 遵循 通用曲线的界面密度（每单位体积的界面面积）。换句话说，kL 随着界面密度的增加而逐渐减小。毫无疑问，随着f（GNs）/ BiSbTe复合材料中GNs含量 的 增加，相界Fp 的体积分数（如表1所示）也随之增加。如图 8（c）所示，很明显，f（GNs）/ BiSbTe的kL 随着Fp 的增加而减小，这是 由于掺入的纳米片和相边界增强了声子的散射所致。异常地，0.3体积％GNs / BiSbTe复合 样品的k 大于0.4体积％GNs / BiSbTe复合样品的k ， 可以归因于 电阻率r 的增加引起的更高的kC

正在翻译中..

结果 (简体中文) 2:[复制]

复制成功！

where tPD, tNP,tpep and tIF are the relaxation times corresponding to scattering from the point defect, nanoinclusions, phononephonon interactions and interfaces, respectively. Obviously, the reduction of kL in the composite samples should be attributed to the additional phonon scattering from nanoinclusion (tNP) and the formed phase boundaries (tIF). Previous studies [39] have confirmed that all the interfaces, whether they are grain boundaries or phase boundaries or whether they belong to the coherent or incoherent interfaces, can inhibit the heat flow without exception through phonon scattering in the system, resulting in remarkable reduction in kL. Moreover, the studies show that the thermal conductivity depends sensitively on the interface density (interface area per unit volume) following a universal curve. In other words, kL reduces gradually with the increasing interface density. Undoubtedly, the volume fraction of phase boundaries Fp (as listed in Table 1) increase with the increasing GNs content for f(GNs)/BiSbTe composites. As shown in Fig. 8(c), it is quite clear that kL for f(GNs)/BiSbTe decreases with the increasing Fp, which is originated from the enhanced phonon scattering by the incorporated nanosheets and the phase boundaries. Anomalously, k for the 0.3 vol.% GNs/BiSbTe composite sample is larger than that of the 0.4 vol.% GNs/BiSbTe sample, which can be attributed to its much higher kC caused by the increase in electrical resistivity r

正在翻译中..

结果 (简体中文) 3:[复制]

复制成功！

式中，tPD、tNP、tpep和tIF是对应的松弛时间 分别从点缺陷、纳米夹杂、声子-声子相互作用和界面散射。很明显 复合样品中kL的减少应归因于 纳米包裹体的附加声子散射 形成相界（tIF）。 先前的研究[39]证实了所有的界面， 无论是晶界还是相界 它们属于相干或非相干界面，能抑制 声子散射中的热流 系统，导致kL显著降低。而且 研究表明，导热系数敏感地依赖于 界面密度（单位体积界面面积） 万能曲线。换句话说，kL随着 增加界面密度。毫无疑问 相界Fp（如表1所列）随着 提高f（GNs）/BiSbTe复合材料的GNs含量。如所示 图8（c），很明显，f（GNs）/BiSbTe的kL随 提高Fp，这是由增强声子引起的 纳米片和相界的散射。反常的是，0.3 vol.%GNs/BiSbTe复合材料的k 样品大于0.4 vol.%GNs/BiSbTe样品，其中 可归因于其高得多的kC是由 电阻率r

正在翻译中..

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