At the same time, it can be clearly seen that when f increases to 0.8wt. %, GaAs particles are unevenly distributed and often aggregate on the fracture surface of the composite sample
At the same time, it is clear that when f increases to 0.8wt. At %, GaAs particles are unevenly distributed and often congregate on the fractured surface of composite samples
At the same time, it can be clearly seen that when f increases to 0.8wt. %The results show that the distribution of GaAs particles is not uniform, and they often gather on the fracture surface of the composite samples