Based on a similar concept, the chemical composition of the substrate is changed by ion implantation [18-20] within a certain depth of the surface of the substrate, so that the surface of the material is rich in silicon and aluminum plasma.
Based on a similar concept, the chemical composition of the substation is changed by injection of ions at a certain depth within a certain depth, so that the surface of the material is rich in silicon and aluminum plasma.
Based on the similar concept, the chemical composition of the substrate is changed by ion implantation [18-20] in a certain depth, so that the surface of the material contains rich silicon and aluminum plasma,