It is reported that these devices c

It is reported that these devices can mimic synaptic functions such as potentiationdepression, long-term potentiation (LTP), long-term depression(LTD), and spike-timing dependent plasticity (STDP).The intrinsic nonlinear I–V characteristics of SiOx and SiNx-based memristors help reduce sneak-path issues and also help in suppressing the sneak current paths in a cross-point array.In our previous study,we chose a simple fabricating method to prepare an SiO2-based tunneling junction resistive switching device, which exhibited two resistance states by using theelectroforming process. This focused on the study of resistive switching performance, while the detailed artificial synaptic behavior and physical mechanism of gradual conduction modulation require further investigation.