在刻蚀刚开始，硅片表面形成不规则的凹坑，铜沉积在凹坑壁上，3min时，

At the beginning of the etching, irregular pits were formed on the surface of the silicon wafer, and copper was deposited on the pit wall. In 3 minutes, a small amount of small inverted pyramid structures were formed on the surface of the silicon wafer, indicating that the copper exhibited at this time Anisotropic etching ability. The inverted pyramids are arranged tightly and the inner wall is angular at 5 min. The size is about 800 nm. At 7 min, the inverted pyramids merge with each other. The inverted pyramid structure is destroyed; for the copper sulfate system, before etching Within 3 minutes, etch pits of different sizes and shapes appeared along the cutting lines on the silicon wafer. The structure similar to the inverted pyramid shape appeared only after 5 minutes. In 7 minutes, there were many inverted pyramid deep pits with unclear edges, indicating that they were in the copper sulfate system. The anisotropic etching ability of copper has not been fully demonstrated; for the copper chloride system, crescent-shaped grooves appeared at the beginning of the reaction. As the reaction progressed, the crescent-shaped pits gradually changed into elliptical pits of varying lengths. The traces on the surface of the silicon wafer are still obvious

At the beginning of etching, the surface of the silicon wafer formed irregular pits, copper deposited on the pit wall, 3min, the silicon surface formed a small number of smaller inverted pyramid structure, indicating that copper at this time showed anthoid etching ability, 5min when the pyramid upside down The arrangement is tight and the inner wall angle is clearly divided, the size is about 800nm, 7min when the pyramids between the phenomenon of mutual annexation of the inverted pyramid structure is destroyed; Inverted pits of different shapes, 5min when similar to the shape of the inverted pyramid structure, 7min appears more types of inverted pyramid pits and angles are not clear, indicating that copper in the copper sulfate system of anthobiotic etching capacity is not fully reflected;

At the beginning of etching, irregular pits are formed on the surface of silicon wafer, and copper is deposited on the wall of the pit. At 3 min, a small amount of small inverted pyramid structure is formed on the surface of silicon wafer, which indicates that copper exhibits anisotropic etching ability at this time. At 5 min, inverted pyramids are closely arranged and the inner wall is angular, and the size is about 800 nm. At 7 min, the inverted pyramids merge with each other For the copper sulfate system, pits of different sizes and shapes appear along the cutting lines 3 minutes before etching, and the structure similar to the inverted pyramid appears 5 minutes before etching, and there are many inverted pyramid like pits with unclear edges and corners in 7 minutes, which indicates that the anisotropic etching ability of copper in copper sulfate system is not fully reflected; for copper chloride body, etching pits with different sizes and shapes appear along the cutting lines With the reaction going on, the crescent shaped pits gradually changed into oval pits with different lengths. After etching, the line marks on the silicon wafer surface were still obvious<BR>