摘要：分子束外延(MBE)是50年代用真空蒸发技术制备半导体薄膜材料发

Abstract: Molecular beam epitaxy (MBE) was developed in the 1950s to prepare semiconductor thin film materials using vacuum evaporation technology to meet the increasingly high requirements in the process of electronic devices. MBE is a dynamic process, not a thermodynamic process. Compared with other epitaxial film growth technologies, MBE has many characteristics, such as low growth rate and lower substrate temperature. In terms of the epitaxial growth technology of ultra-thin materials, the advent of MBE has enabled the realization of epitaxial growth with thicknesses on the order of atoms and molecules. , Opened up the new semiconductor field of energy band engineering. The development of semiconductor materials science has played a positive role in promoting semiconductor physics and information science. MBE is a more useful method for preparing new devices, but it has its shortcomings. The future development trend is to continuously improve MBE in combination with other growth technologies, such as the combined use of MBE and VPE, gaseous molecular beam epitaxy (GSMBE), laser molecular beam epitaxy, LaserMBE, Etc. [1]. <br>Keywords: molecular beam epitaxy; thin film, growth technology, semiconductor

Abstract: Molecular beam extension (MBE) was developed in the 1950s using vacuum evaporation technology to prepare semiconductor film materials, in order to meet the increasingly high requirements in electronic device processes. MBE is a dynamic process, not a thermodynamic process. Compared with other extended film growth techniques, MBE has many characteristics, such as low growth rate and low substrate temperature. In the ultra-thin layer material extension growth technology, the advent of MBE so that the atomic, molecular order of magnitude thickness of the extended growth to achieve, opened up a new semiconductor field of energy belt engineering. The development of semiconductor materials science plays an active role in semiconductor physics and information science. MBE is a useful method for preparing new devices, but it has its disadvantages. The future trend is to continuously improve MBE in combination with other growth technologies, such as MBE and VBE, gaseous source molecular beam extension (GSMBE), laser molecular beam extension, LaserMBE, etc.<br>Keywords: molecular beam extension; Films, growth technologies, semiconductors

Abstract: molecular beam epitaxy (MBE) was developed in the 1950s to prepare semiconductor thin films by vacuum evaporation technology, in order to meet the increasingly high requirements in electronic device technology. MBE is a dynamic process, not a thermodynamic process. Compared with other epitaxial thin film growth technologies, MBE has many characteristics, such as low growth rate and low substrate temperature. In the aspect of epitaxial growth technology of ultra-thin layer materials, MBE has realized the epitaxial growth of atomic and molecular thickness, and opened up a new semiconductor field of energy band engineering. The development of semiconductor materials science plays a positive role in semiconductor physics and information science. MBE is a useful method to fabricate new devices, but it has its disadvantages. The future development trend is to improve MBE in combination with other growth technologies, such as MBE and VPE, gas source molecular beam epitaxy (GSMBE), laser molecular beam epitaxy, lasermbe, etc.<br>Key words: molecular beam epitaxy; thin film, growth technology, semiconductor<br>