1. Introduction A silicon-to-silicon low-temperature fusion-bond process has been presented in Ref. [ 11. In that process, non-oxidized wafers were fusion bonded. However, in applications where an electronics chip and a micromachined chip are bonded. an insulating layer between the two chips is required to ensure proper functioning of the electronic circuity and to prevent interference. Silicon oxide as a standard layer in device production is very attractive for fulfilling this requirement. This process allows for the development of a new type of smart sensors and actuators where electronics and sensor chip are fabricated in their own process and merged by fusion bonding.