CIGS太阳能电池板的制造方法：用交替溅射的方法制备铜铟镓硒薄膜太阳能

CIGS太阳能电池板的制造方法：用交替溅射的方法制备铜铟镓硒薄膜太阳能电池预置层，通过可变占空比的电源控制器实现对Cu/Ga合金靶以及In靶溅射时间的控制，进而实现对最后元素配比的控制。在一个溅射周期中，Cu-Ga合金靶溅射时间对最后成分影响最大，其次是In靶溅射时间，非溅射时间的长短对成分也有影响。交替溅射制备的铜铟镓硒预置层经过XRD检测，合金相主要为Cu11In9。

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结果 (英语) 1: [复制]

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Manufacturing method of CIGS solar panel: Prepare the preset layer of copper indium gallium selenium thin film solar cell by alternate sputtering method, and realize the sputtering time of Cu/Ga alloy target and In target through the power controller with variable duty cycle. Control, and then realize the control of the final element ratio. In a sputtering cycle, the Cu-Ga alloy target sputtering time has the greatest influence on the final composition, followed by the In target sputtering time, and the non-sputtering time also has an effect on the composition. The copper indium gallium selenium pre-layer prepared by alternate sputtering was tested by XRD, and the alloy phase was mainly Cu11In9.

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结果 (英语) 2:[复制]

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Manufacturing method of CIGS solar panel: the preset layer of copper indium gallium selenium thin film solar cell is prepared by alternating sputtering, and the sputtering time of Cu / GA alloy target and in target is controlled by the power controller with variable duty cycle, so as to realize the control of the final element ratio. In a sputtering cycle, the sputtering time of Cu GA alloy target has the greatest influence on the final composition, followed by the sputtering time of in target, and the length of non sputtering time also has an influence on the composition. The copper indium gallium selenium preset layer prepared by alternating sputtering is detected by XRD, and the alloy phase is mainly cu11in9.

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结果 (英语) 3:[复制]

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The manufacturIng method of CIGS solar panel: the copper indium gallium selenide thin film solar cell preset layer is prepared by alternate sputtering method, and the sputtering time of Cu/Ga alloy target and in target is controlled by the power controller with variable duty ratio, so as to control the final element ratio. In a sputtering cycle, the sputtering time of Cu-Ga alloy target has the greatest influence on the final composition, followed by the sputtering time of In target, and the length of non-sputtering time also has an influence on the composition. XRD test shows that the alloy phase of Cu-In-Ga-Se preset layer prepared alternately by sputtering is mainly Cu11In9.

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