4.4划擦速度对GaAs划痕形成的影响模拟不同速度下的划擦过程，速度选

4.4 The effect of scratch speed on the formation of GaAs scratches <br>Simulating the scratch process at different speeds, the speed is selected as 10m / s and 100m / s. The GaAs material is selected as the (100) crystal plane, the abrasive grain size is 8 nm, and the indentation depth is 2.0 nm. The morphology of the scratches on the surface of the gallium arsenide material during the scratching process at different speeds is obtained through simulation, as shown in Figure 8.

4.4 Effect of scratch speed on GaAs scratch formation<br>Simulate the scratch process at different speeds, with speed sits selected for 10m/s and 100m/s. GaAs material sittivated as (100) crystal surface, grinding particle size of 8nm and press-in depth of 2.0nm. The surface scratch profile of the gallium arsenide material during the scratch process is obtained by simulation, as shown in Figure 8.

4.4 effect of scratch speed on GaAs scratch formation<br>The scuffing process at different speeds was simulated, and the speeds were selected as 10m / s and 100M / s. The choice of GaAs material is (100) crystal surface, the abrasive particle size is 8nm, and the pressing depth is 2.0nm. Through simulation, the scratch morphology of gallium arsenide surface under different speed is obtained, as shown in Figure 8.<br>