但直接利用铜颗粒辅助刻蚀后在硅表面引入倒金字塔上存在尖锐结构，使得表面

However, after using copper particles directly to assist etching, there is a sharp structure introduced into the inverted pyramid on the silicon surface, which makes the surface recombination rate still at a high level and poor passivation, etc., resulting in poor efficiency of photovoltaic cells obtained by using this technology. This defect severely restricts the further development of copper-assisted catalytic etching process

但直接利用铜颗粒辅助刻蚀后在硅表面引入倒金字塔上存在尖锐结构，使得表面复合率仍处于较高水平且钝化不佳等，致使利用该技术获得光伏电池效率不佳。该缺陷严重制约铜辅助催化刻蚀工艺进一步发展

However, there is sharp structure on the silicon surface after directly using copper particles to assist etching, which makes the surface compounding rate still at a high level and poor passivation, resulting in poor efficiency of photovoltaic cells obtained by using this technology. The defects seriously restrict the further development of copper assisted catalytic etching process<BR>