In the third part, experiments were

In the third part, experiments were carried out on the traditional structure PEDOT:PSS/ c-si solar cells with low performance, which was mainly caused by the composite loss on the back surface and PEDOT:PSS parasitic absorption loss. To solve this problem, SHJ surface and field passivation technology was applied to the battery, and the trans-structure was adopted to improve the battery efficiency. And SHJ battery back surface and field passivation technology, the application of intrinsic and n-type amorphous silicon thin films (I, na-si :H) to the back surface of the formal structure PEDOT:PSS/ c-si heterojunction solar cells, due to the surface and field passivation, can effectively reduce the carrier compound rate on the back surface, increase the PCE from 8.3% to 12.1%; The trans-structure was adopted, and the PEDOT:PSS film was placed on the back of the battery. Combined with SHJ technology, the quantum efficiency of the battery in the wavelength range of 600-1100 nm was effectively improved. The short-circuit current density was increased from 29.7 mA/cm2 to 36.2ma /cm2, and the battery efficiency was increased to 16.1%.