金属铜辅助化学刻蚀机理与银辅助化学刻蚀不完全相同，如下图所示，由于铜的

Copper assisted chemical etching mechanisms and the silver assisted chemical etching are not identical, as shown below, since the chemical potential of copper in the band gap of silicon, thus requiring the presence of hydrogen peroxide acts as an oxidizing agent instead of copper ions in the silicon hole injection valence band of silicon oxide,

The mechanism of metal copper-assisted chemical etching is not exactly the same as silver-assisted chemical etching, as shown in the figure below, since the chemical potential of copper is in the silicon's fast-limiting zone, the presence of hydrogen peroxide is needed instead of copper ions as an oxidant to inject the cavitation into the silicon valence band to oxidize the silicon.

The mechanism of copper-assisted chemical etching is not exactly the same as that of silver-assisted chemical etching. As shown in the figure below, because the chemical potential of copper is in the forbidden band of silicon, hydrogen peroxide is needed to replace copper ion as oxidant to inject holes into the valence band of silicon to oxidize silicon.<BR>