Based on a similar concept, the chemical composition of the surface layer of the substrate can be changed by ion implantation, so that the surface of the material is rich in silicon and aluminum plasma.
Based on similar concepts, the chemical composition of the surface of the substation can be changed by ion injection, so that the surface of the material is rich in silicon and aluminum plasma.
Based on the similar concept, the chemical composition of the surface layer of the substrate can be changed by ion implantation, so that the surface of the material contains rich silicon and aluminum plasma.<br>