摘要：随着半导体产业的飞速发展，在硅片直径不断增大的同时，硅片厚度也在

摘要：随着半导体产业的飞速发展，在硅片直径不断增大的同时，硅片厚度也在变小，这样就对硅片切割方法提出了更加严格的要求。切片是硅片制备过程中一道至关重要的工序，切割工艺和方法直接影响到硅片表面晶向、厚度、粗糙度、TTV和翘曲度等参数，对硅片最终的品质和成品率有非常大的影响[1]。本文介绍了多线切割技术与金刚石切割技术两种切割技术，并对其各自特点与发展进行了简单分析。<br>关键词：硅片、多线切割技术、金刚石切割技术、发展

摘要：随着半导体产业的飞速发展，在硅片直径不断增大的同时，硅片厚度也在变小，这样就对硅片切割方法提出了更加严格的要求。 切片是硅片制备过程中一道至关重要的工序，切割工艺和方法直接影响到硅片表面晶向、厚度、粗糙度、TTV和翘曲度等参数，对硅片最终的品质和成品率有非常大的影响[1]。 本文介绍了多线切割技术与金刚石切割技术两种切割技术，并对其各自特点与发展进行了简单分析。<br>关键词：硅片、多线切割技术、金刚石切割技术、发展

Abstract: with the rapid development of the semiconductor industry, the diameter of the silicon wafer is increasing, while the thickness of the silicon wafer is also decreasing, which puts forward more stringent requirements for the silicon wafer cutting method. Slicing is a crucial process in the process of silicon wafer preparation. The cutting process and method directly affect the parameters of silicon wafer surface, such as crystal orientation, thickness, roughness, TTV and warpage, and have a great impact on the final quality and yield of silicon wafer [1]. This paper introduces two kinds of cutting technology, multi wire cutting technology and diamond cutting technology, and analyzes their respective characteristics and development.<br>Key words: silicon wafer, multi wire cutting technology, diamond cutting technology, development<br>