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The α-MoO3 ceramics were prepared b
The α-MoO3 ceramics were prepared by uniaxial pressing and sintering of MoO3 powder at 650 oC and their structure, microstructure, densification and sintering and microwave dielectric properties were investigated. The sintering temperature of α-MoO3 was optimized based on the best densification and microwave dielectric properties. After sintering at 650 oC the relative permittivity was found to be 6.6 and the quality factor was 41,000 GHz at 11.3 GHz. The full-width half-maximum of the A1g Raman mode of bulk α-MoO3 at different sintering temperatures correlated well with the Qf values. Moreover, the sintered samples showed a temperature coefficient of the resonant frequency of -25 ppm/oC in the temperature range from -40 to 85 oC and they exhibited a very low coefficient of thermal expansion of ±4 ppm/oC. These microwave dielectric properties of α-MoO3 will be of great benefit in future MoO3 based materials and their applications.
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通过在650 oC下单轴压制和烧结MoO3粉末制备α-MoO3陶瓷，研究了它们的结构，微观结构，致密化和烧结以及微波介电性能。基于最佳的致密化和微波介电性能，优化了α-MoO3的烧结温度。在650 oC烧结后，相对介电常数为6.6，品质因数在11.3 GHz为41,000 GHz。在不同的烧结温度下，块状α-MoO3的Alg拉曼模式的全宽半最大值与Qf值很好地相关。此外，烧结样品在-40至85 oC的温度范围内显示出谐振频率的温度系数为-25 ppm / oC，并且它们的热膨胀系数非常低，为±4 ppm / oC。
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The α-MoO3 ceramics were prepared by uniaxial pressing and sintering of MoO3 powder at 650 oC and their structure, microstructure, densification and sintering and microwave dielectric properties were investigated. The sintering temperature of α-MoO3 was optimized based on the best densification and microwave dielectric properties. After sintering at 650 oC the relative permittivity was found to be 6.6 and the quality factor was 41,000 GHz at 11.3 GHz. The full-width half-maximum of the A1g Raman mode of bulk α-MoO3 at different sintering temperatures correlated well with the Qf values. Moreover, the sintered samples showed a temperature coefficient of the resonant frequency of -25 ppm/oC in the temperature range from -40 to 85 oC and they exhibited a very low coefficient of thermal expansion of ±4 ppm/oC. These microwave dielectric properties of α-MoO3 will be of great benefit in future MoO3 based materials and their applications.
正在翻译中..
以MoO3粉体为原料，采用650℃单轴压制烧结法制备了α-MoO3陶瓷，并对其结构、显微组织、致密化烧结及微波介电性能进行了研究。在最佳致密化和微波介电性能的基础上，优化了α-MoO3的烧结温度。650℃烧结后的相对介电常数为6.6，11.3ghz时的品质因数为41000ghz。不同烧结温度下大块α-MoO3的A1g拉曼模的全宽半最大值与Qf值有很好的相关性。此外，烧结样品在-40-85℃的温度范围内显示出-25ppm/oC的谐振频率的温度系数，并且显示出非常低的热膨胀系数±4ppm/oC。这些α-MoO3的微波介电性能将对今后MoO3基材料及其应用具有重要的意义。<br>
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