相比之下，RVE反应一开始，硅料与酸迅速反应，产生大量的热，刻蚀反应迅

In contrast, at the beginning of the RVE reaction, the silicon material reacts quickly with the acid, generating a lot of heat, and the etching reaction is rapid. As the reaction proceeds, the corrosive gas is consumed, the reaction rate becomes slower, and the formation of large amounts on the surface of the silicon wafer As shown in Figure 9a, the TVE reaction is uniformly generated due to the continuous constant temperature heating, so that the silicon wafer is etched continuously and stably, and the reaction rate is stable. From the etching morphology, the TVE reaction is equivalent to the RVE The secondary etching is performed on the basis of the reaction, and the secondary etch pits of large pits and small pits are formed. The surface microstructure has higher roughness and lower reflectivity.

In contrast, rVE reaction at the beginning, silicon and acid reaction quickly, produced a large amount of heat, etching reaction is rapid, as the reaction is carried out, corrosive gas is consumed, reaction rate slows down, in the silicon surface to form a larger crater, as shown in Figure 9a, and TVE reaction due to continuous constant constant temperature heating makes the reaction gas uniform, so that the silicon VE is continuously and steadily etched, the reaction rate is stable, from the etching of the etching, T equivalent to the second reaction on the basis of R. A secondary crater with a large pit set and a small pit with a high erstness and lower reflectivity of the surface microstructure.

In contrast, at the beginning of rve reaction, silicon material reacts rapidly with acid to generate a large amount of heat, and etching reaction is rapid. With the reaction going on, corrosive gas is consumed, and the reaction rate becomes slow, and large etch pits are formed on the surface of silicon wafer, as shown in Fig. 9A. However, due to continuous constant temperature heating, the reaction gas is uniformly generated in TVE reaction, and the silicon wafer is continuously and stably etched In terms of etching morphology, TVE reaction is equivalent to secondary etching on the basis of rve reaction, forming a secondary etching pit with large pits and small pits. The surface microstructure roughness is higher and the reflectivity is lower,<BR>