通过实验得出结论，阴离子将极大影响铜的各向异性刻蚀行为，其中硝酸铜体系

It is concluded through experiments that anions will greatly affect the anisotropic etching behavior of copper. The moderately sized copper particles deposited in the copper nitrate system make the reaction mild and the anisotropic etching ability fully demonstrated, which can be used on silicon wafers. A uniform inverted pyramid structure is formed under the condition of low thinning, and the average reflectivity is as low as 9.8%

It is concluded from the experiment that anions will greatly affect the anthoid etching behavior of copper, in which the moderate-sized copper particles deposited in the copper nitrate system make the reaction moderate and anobiophonic etching ability fully demonstrated, and can form a uniform inverted pyramid structure under the condition of low thinning of silicon wafers, and the average reflectivity is as low as 9.8%.

The results show that anions will greatly affect the anisotropic etching behavior of copper. The moderate size copper particles deposited in the copper nitrate system make the reaction mild and the anisotropic etching ability can be fully demonstrated. The uniform inverted pyramid structure can be formed under the condition of low silicon wafer thinning, and the average reflectivity is as low as 9.8%