从铜沉积形貌角度系统分析了硝酸根，硫酸根和氯离子体系在铜催化刻蚀过程中

From the perspective of copper deposition morphology, the effects of nitrate, sulfate and chloride ion systems on the etching morphology of n-type single crystal silicon in the copper catalytic etching process are systematically analyzed. It can be seen that the nature of anions affects the copper deposition and thus the copper catalysis The etching behavior during the reaction and the oxidation of nitrate ions slow down the copper deposition rate, and copper nanoparticles aggregate into single larger copper particles. These copper particles have anisotropic etching ability, thus forming an inverted pyramid Structure, copper nanoparticles of small size in the copper sulfate etching system are deposited on the surface of the silicon wafer. The residence time is short but the contact area is large, which leads to a fast reaction rate, resulting in an insignificant anisotropic etching behavior, but forms of different sizes. Inverted pyramid structure; in the chloride ion system, due to the polarization of chloride ions, copper ions are difficult to deposit, so they preferentially deposit in defects such as cut lines, and agglomerate into long rod-shaped particles. During the reaction, copper and silicon wafers are not in local contact. Therefore, it does not exhibit anisotropic etching ability, but forms a pit-like structure

从铜沉积形貌角度系统分析了硝酸根，硫酸根和氯离子体系在铜催化刻蚀过程中对n型单晶硅刻蚀形貌的影响，可知阴离子性质影响铜的沉积，从而影响铜催化反应过程中的刻蚀行为，对硝酸根离子的氧化性使铜沉积速率减慢，铜纳米粒子聚集成单个的较大的铜颗粒，这些铜颗粒具有各向异性刻蚀能力，因而形成倒金字塔结构，硫酸铜刻蚀体系中小尺寸的铜纳米粒子沉积在硅片表面，停留时间较短但接触面积大导致反应速率快，导致各向异性刻蚀行为不明显，而是形成大小不一的类倒金字塔结构；氯离子体系中，由于氯离子极化作用，铜离子难以沉积，因此优先在切割纹等缺陷中沉积，且团聚成长条棒状颗粒，反应过程中铜与硅片并非局域接触，因而不表现出各向异性刻蚀能力，而是形成凹坑状结构

From the perspective of copper deposition morphology, the influence of nitrate, sulfate and chloride ion systems on the etching morphology of n-type monocrystalline silicon in the process of copper catalytic etching is systematically analyzed. It is known that the anionic properties affect the deposition of copper, thus affecting the etching behavior in the process of copper catalytic reaction. The oxidation of nitrate ions slows down the deposition rate of copper, and copper nanoparticles aggregate into single large copper particles These copper particles have the ability of anisotropic etching, thus forming inverted pyramid structure. In the copper sulfate etching system, small and medium-sized copper nanoparticles are deposited on the surface of silicon wafer, and the residence time is short, but the contact area is large, resulting in the reaction rate is fast, resulting in the formation of different sizes of inverted pyramid structure; in the chloride ion system, due to the chloride ion Due to polarization, copper ions are difficult to deposit. Therefore, copper ions are preferentially deposited in defects such as cutting lines and agglomerate long rod-shaped particles. During the reaction process, copper and silicon are not in local contact, so they do not show anisotropic etching ability, but form pits<BR>