This paper deals with the effect of negative gate bias stress with different times on the Carbon Nanotube FieldEffect Transistor (CNTFET) based gas sensors, obtained using Single-Walled Carbon Nanotubes (SWCNTs) matsas channel.
This paper deals with the effect of negative gate bias stress with different times on the Carbon Nanotube Field<br>Effect Transistor (CNTFET) based gas sensors, obtained using Single-Walled Carbon Nanotubes (SWCNTs) mats<br>as channel.