2.1 Making Graphene by Molecular Be

2.1 Making Graphene by Molecular Beam Epitaxy Thetraditional MBE process generally uses SiC as a substrate and a carbon material as a carbon source to perform epitaxial growth of graphene at high temperatures. Park et al. for example, took advantage of the MBE process and used graphite and Cso as carbon sources to successfully epitaxially grow a relatively uniform graphene layer on the surface of 4H-SiC. Experimental results show that carbon materials can be used as well as SiC epitaxial growth of graphene carbon source . In other words, the additional C60 participates directly in the nucleation and growth of the graphene film.2.2 Rapid Annealing Technology for the Production of GraphsThe process of using rapid thermal annealing to make graphene. The process uses Si / SiO2 as the substrate. First a Ni layer is deposited on the substrate and then graphite powder is uniformly dispersed on the Ni surface to form a sandwich structure of Si / SiO2 / Ni / graphite powder, and finally 25 Treat for 1 -10 min at -260 ° C. After the treatment is completed, the Ni and excessive graphite on the surface are removed by etching, and a graphene layer without micrometer wrinkles can be obtained on the surface of the Si.2.3 Production of graphene with polymer as a carbon sourceAs a cost-effective and highly efficient technology for the production of graphene, the CVD process is attracting increasing attention in research. The currently mature CVD process often uses catalytic transition metals or semiconductors (such as Ni, Cu, Ru, Pt, Au, Ge, etc.) as substrates and small gaseous organic molecules as carbon sources (CH4, C2H2) for preparing graphene films. The specific upper process flow: first place the metal substrate in the tube furnace, then use a mechanical pump to maintain the low pressure environment inside the furnace and keep shielding gases (such as H2, Ar, etc.) and gas coal sources into the furnace, in this process the The temperature in the furnace is gradually increased to the film growth temperature, and the temperature is maintained for a suitable time,