CMOS is made up of FET (unipolar ci

CMOS is made up of FET (unipolar circuit), TTL is made up of bipolar transistor (bipolar circuit)The logic level range of COMS is relatively large (5-15v), and TTL can only work at 5VThe difference between the high and low level of CMOS is large, with strong anti-interference, while the TTL is small, with poor anti-interference abilityCMOS power consumption is very small, TTL power consumption is largeCMOS has a slightly lower operating frequency than TTL, but the high-speed CMOS speed is similar to TTLThe noise tolerance of CMOS is larger than that of TTLThe main factors that affect the operation speed of TTL gate circuit are the switch characteristics of the inner tube, the circuit structure and the resistance values. The higher the resistance value, the lower the working speed. The longer the opening and closing time of the pipe, the lower the working speed of the door. The speed of the gate is mainly reflected in the "transmission delay" TPD between the output waveform and the input waveform. The product of TPD and no-load power P is called "speed power product". As an important index of device performance, the smaller the value is, the better the device performance isDifferent from TTL gate circuit, the main factor that affects the working speed of CMOS circuit is the external part of the circuit, i.e. load capacitance CL. CL is the main reason that affects the working speed of the device. The transmission delay of CMOS gate determined by CL is about tens of nanoseconds.TTL circuit is a current control device, while COMS circuit is a voltage control device