H2O2在铜辅助化学刻蚀过程中起着重要作用，调配H2O2浓度可控制铜颗

H2O2 plays an important role in the copper-assisted chemical etching process. The concentration of H2O2 can control the deposition behavior of copper particles and form an inverted pyramid structure with uniform morphology and low reflectivity on the surface of the silicon wafer. At 40℃, adjust the appropriate concentration of H2O2 to prepare a uniform inverted pyramid structure on the diamond wire-cut n-type monocrystalline silicon wafer, the surface reflectivity is reduced to 7.2%, and the reaction rate is mild (0.23μm/min). Low thinning (3.5μm).

H2O2 plays an important role in copper-assisted chemical etching, and the deployment of H2O2 concentrations can control the deposition behavior of copper particles and thus form an inverted pyramid structure with uniform appearance and low reflectivity on the surface of the silicon wafer. At 40 degrees C, a suitable H2O2 concentration is adjusted to produce a uniform inverted pyramid structure on the King Kong line cutting n-type monocrystalline silicon wafer, the surface reflectivity is reduced to 7.2%, and the reaction rate is moderate (0.23 m/min), and the thinning of the wafer is low (3.5 m).

H2O2 plays an important role in the process of copper assisted chemical etching. The deposition behavior of copper particles can be controlled by adjusting the concentration of H2O2, and the inverted pyramid structure with uniform morphology and low reflectivity can be formed on the surface of silicon wafer. Uniform inverted pyramid structure was prepared on n-type silicon wafers by diamond wire cutting at 40 ℃ with appropriate concentration of H2O2. The surface reflectivity was reduced to 7.2%, and the reaction rate was mild (0.23 μ M / min), and the wafer thinning was low (3.5 μ m).<BR>