1 The substrate of the first semico

1 The substrate of the first semiconductor layer is grown on the first 1 and second step 1, a releasable adhesive layer by heating a polymer film comprising a first adhesive surface adhered to the upper surface of the first semiconductor layer 1 and a step of 2, 1 with respect to the substrate of the first semiconductor layer opposite the first surface 1, 1 of the first substrate 1 therethrough and is absorbed by the first semiconductor layer by irradiating irradiation light having a wavelength, the first semiconductor layer and the second substrate 1 1 between the first semiconductor layer 1 are thermally decomposed to form the separation layer 3 becomes the first step of, claim 1 of the substrate is heated to weaken the adhesive layer by, wherein the first semiconductor layer 1 from the first polymer film 4 and the step of peeling 、3 4 of the first and the second step between the step of, the separation layer by selectively removing, the first semiconductor layer 1 1 of the first substrate 5 and separated from the first step, 1 1 of the first semiconductor layer is separated from the first surface of the substrate, wherein the first material that is different from the first substrate 1 of 2 6 and a step of bonding the first addition and a method of manufacturing a semiconductor device.