Based on the calculated results, it is clear that the end of range for 3 MeV proton far exceeds the base and the DLTS-probed region, and displacement and ionization absorbed dose change slightly with the depth of the device chip. The ionization dose of 3 MeV proton with the fluences of 4.16 × 1011 p/cm2, 1.04 × 1012 p/cm2 and 2.08 × 1012 p/cm2, are about 5.90 × 105 rad, 1.47 × 106 rad and 2.95 × 106 rad, respectively. The displacement dose of 3 MeV proton with the fluences of 4.16 × 1011 p/cm2, 1.04 × 1012 p/cm2 and 2.08 × 1012 p/cm2, are about 1000 rad, 500 rad and 200 rad, respectively.