与钙钛矿等无机太阳能电池相比，由于OSCs能量损失相对较大, 其光伏性

与钙钛矿等无机太阳能电池相比，由于OSCs能量损失相对较大, 其光伏性能仍然落后。能量损失来自于活性层吸光的带隙与器件开路电压(VOC)的差异，根据 Shockley–Queisser ( SQ )极限，如图所示，OSCs 中的 Eloss 可以分为三个部分，ΔE1 来源于高于带隙的辐射损失，是不可避免的，一般在 0.30 eV 左右。 ΔE2 来自于低于带隙的辐射复合，∆E2值与给受体材料的能级差有关，能极差越大则损失越大。所以可以通过优化分子结构实现对分子能级的调控。ΔE3 主要由强非辐射复合造成，还和许多界面因素有关。从材料角度来说，ΔE3可以通过增加分子的刚性以及在受体中引入缺电子单元等手段来减少非辐射复合。所以能量损失与受体材料的分子结构密切相关。

Compared with inorganic solar cells such as perovskite, due to the relatively large energy loss of OSCs, their photovoltaic performance still lags behind. The energy loss comes from the difference between the bandgap of the active layer absorption and the open circuit voltage (VOC) of the device. According to the Shockley Queisser (SQ) limit, as shown in the figure, the Eloss in OSCs can be divided into three parts, Δ E1 originates from radiation loss higher than the bandgap, which is inevitable and generally around 0.30 eV. Δ E2 comes from radiation recombination below the bandgap, and the ∆ E2 value is related to the energy level difference of the donor acceptor material. The larger the energy range, the greater the loss. So, molecular energy levels can be regulated by optimizing the molecular structure. Δ E3 is mainly caused by strong non radiative recombination and is also related to many interface factors. From a material perspective, Δ E3 can reduce non radiative recombination by increasing molecular rigidity and introducing electron deficient units into the receptor. So energy loss is closely related to the molecular structure of the receptor material.

Compared with inorganic solar cells such as perovskite, the photovoltaic performance of OSCs is still backward because of its relatively large energy loss. The energy loss comes from the difference between the absorption band gap of the active layer and the open circuit voltage (VOC) of the device. According to the Shockley-Queisser (SQ) limit, as shown in the figure, the Eloss in OSCs can be divided into three parts, and the δ E1 comes from the radiation loss higher than the band gap, which is inevitable, generally around 0.30 eV. ΔE2 comes from radiation recombination below the band gap, and the value of E2 is related to the energy level difference of donor and acceptor materials. The greater the energy range, the greater the loss. Therefore, the molecular energy level can be regulated by optimizing the molecular structure. ΔE3 is mainly caused by strong nonradiative recombination, and is also related to many interface factors. From the material point of view, δ E3 can reduce nonradiative recombination by increasing the rigidity of molecules and introducing electron-deficient units into acceptors. Therefore, the energy loss is closely related to the molecular structure of the acceptor material.