In the process of magnetorheological polishing, the phenomenon of molecular agglomeration will occur, and the gathering of molecular clusters will seriously affect the surface quality of the wafer. <br><br>To a certain extent, it can be understood that the molecular reunion is that the particle size of the abrasive particles becomes larger. <br><br>In the case of a certain depth, as the particle size of the abrasive particles increases, the scratch width increases. <br><br>The amount of scratch uplift is the difference between the highest position of the gallium arsenide atom in the z direction and the highest atom position of its initial surface after the scratching process. <br><br>The amount of scratch bulge presents a trend of increasing first and then decreasing. When the abrasive grain diameter is 6 nm, the amount of scratch bulge reaches the maximum value. <br><br>The way in which the uplifted atoms stack up is also different.
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