4. ConclusionsIn summary, we have successfully densified BaTiO3 ceramics at 300 oC without any secondary heat treatment with the cold sintering technique. The resulting dielectric permittivity is 700-1800 depending on processing conditions. The dielectric properties are comparable to the reported values considering the grain size effect. The dielectric properties are comparable to the highest quality reported data that required preparation by high temperature sintering techniques (> 1000 oC) reported previously. The sintering temperature in this work is even lower than the processing temperature for high quality BaTiO3 thin films. The Cold-Sintered BaTiO3 ceramic shows a P-E loop with relatively high remanent polarization. This work should open up the possibility to densify more inorganic materials at low temperatures in a single step.