铜辅助化学刻蚀是一种低成本，高效率的湿法制绒技术，潜力巨大，然而，刻蚀

Copper-assisted chemical etching is a low-cost, high-efficiency wet texturing technology with great potential. However, the inverted pyramid morphology obtained after etching is usually sharp and covered with a layer of nano-silicon. These sharp structures are easy to form The recombination center reduces the lifetime of minority carriers and is not conducive to the improvement of solar cell performance. Therefore, surface modification of silicon wafers after copper-assisted chemical etching is particularly important. In this article, we used copper-iron system, KOH system and ultrasonic method to smooth the surface of copper catalytically etched silicon wafer. By controlling the processing time, the surface is smoother than the newly etched silicon wafer. Atomic force microscopy can qualitatively see the reduction in roughness, which is helpful for the preparation of high-efficiency solar cells

Copper-assisted chemical etching is a low-cost, high-efficiency wet velvet technology, great potential, however, after etching obtained the inverted pyramid-shaped appearance is usually sharp structure, and covered by a layer of nano-silicon, these sharp structures easy to form a composite center, reduce the life of young children, is not conducive to the performance of solar cells, so the surface modification of copper-assisted chemical etching silicon is particularly important. In this article, we use copper-iron system, KOH system and ultrasonic method sleek the surface of copper catalytic etching silicon wafers, by controlling the processing time, compared with the newly etched silicon wafer sleek surface, the use of atomic force microscope can qualitatively see the roughness of the reduction, help ingestefficient solar cell preparation

Copper assisted chemical etching is a low-cost and high-efficiency wet process cashmere technology with great potential. However, the inverted pyramid obtained after etching is usually sharp in structure and covered with a layer of nano silicon. These sharp structures are easy to form composite centers, reduce minority carrier life, and are not conducive to the improvement of solar cell performance. Therefore, the surface of silicon wafer after copper assisted chemical etching is repaired Decoration is particularly important. In this paper, we use the methods of copper iron system, Koh system and ultrasonic to treat the surface of copper catalytic etched silicon wafer. By controlling the processing time, the surface is more smooth than that of the rigid etched silicon wafer. Using atomic force microscope, we can qualitatively see that the roughness is lower, which is helpful for the preparation of efficient solar cells<BR>