Based on a similar concept, the chemical composition of the substrate is changed by ion implantation within a certain depth of the surface of the substrate, so that the surface of the material is rich in silicon and aluminum plasma.
Based on similar ideas, the chemical composition of the substation is changed by ion injection at a certain depth within a certain depth, so that the surface of the material is rich in silicon and aluminum plasma.
Based on the similar concept, the chemical composition of the substrate is changed by ion implantation in a certain depth, so that the surface of the material contains rich silicon and aluminum plasma.<br>