为了排除Si的影响，王恩哥等人利用偏压辅助热丝化学沉积方法在Ni衬底上

In order to exclude the influence of Si, Wang Enge and others used bias-assisted hot-wire chemical deposition method to prepare C3N4 hexagonal prism with clear crystal morphology for the first time on Ni substrate. However, due to the easier generation of CH and NH products under chemical vapor deposition conditions, the carbon nitride films prepared by plasma chemical vapor deposition or physical vapor deposition methods are mostly amorphous, and many research efforts have focused on the mechanical properties of the films, Field emission performance, etc., and the research progress on the synthesis and structure of carbon nitride crystals is slow.

In order to rule out the influence of Si, Wang Engo et al. used the chemical deposition method of bias-assisted hot wire to obtain the C3N4 hexagon with clear crystal profile on the Ni substrate for the first time. However, due to the easy generation of C-H and N-H products under the condition of chemical vapor deposition, the carbon nitride film prepared by plasma chemical vapor deposition or physical vapor deposition method is mostly amorphous, and much research focuses on the mechanical properties of the film, field emission performance, etc., and the synthesis and structure of nitriding carbon crystals is slow.

In order to eliminate the influence of Si, Wang Enge et al. First prepared C3N4 hexahedron with clear crystal morphology on Ni Substrate by bias assisted hot filament chemical deposition. However, it is easier to produce C-H and N-H products under the condition of chemical vapor deposition, which makes most of the carbon nitride films prepared by plasma chemical vapor deposition or physical vapor deposition are amorphous. Many researches focus on the mechanical properties and field emission properties of the films, while the research progress on the synthesis and structure of carbon nitride crystals is slow.<br>