The composite material not only achieves high electron mobility, <br>but also <br>increases the Seebeck coefficient due to energy-dependent carrier scattering, and enhances the phonon block <br>, which not only <br>greatly reduces the power factor (PF) (at 300K Reduced by 40%), and also increased the power factor (PF) by about 38%. <br>The lattice thermal conductivity of SnxBi2Te2.7Se0.3 matrix composite with Sn content of f¼0.2 wt%. Formation <br>of dressings absorbed by the mechanism , regardless of high maximum ZT (ZTmax ¼ 1.11 at ~370 K) and large <br>average ZT (ZTave ¼ 1.03 in the operating temperature range of 300K-500K) <br>can be achieved.
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