本文将研究在抛光过程中，抛光液中磨粒粒径与抛光工艺参数抛光深度等对于G

In this article, we will study the influence of the abrasive particle size in the polishing liquid and the polishing process parameters on the formation of scratches on the surface of the GaAs wafer during the polishing process, and reveal the genesis of the scratches on the surface of the GaAs wafer. For GaAs materials with anisotropic properties, under the same polishing solution formulation and polishing process, the distribution characteristics of scratches on surfaces with different crystal orientations will be studied. It provides theoretical support for suppressing the formation of scratches on the wafer surface and improving the surface polishing quality of semiconductor wafers.

本文将研究在抛光过程中，抛光液中磨粒粒径与抛光工艺参数抛光深度等对于GaAs晶圆表面划痕形成的影响，揭示GaAs晶圆表面划痕的创成特征。针对具有各向异性特性的GaAs材料，研究在相同的抛光液配方以及抛光工艺情况下，不同晶向晶向表面会产生划痕的分布特征。为抑制晶圆表面划痕的形成、提高半导体晶圆的表面抛光质量提供理论支撑。

In this paper, we will study the influence of abrasive particle size and polishing depth on the scratch formation of GaAs wafer surface, and reveal the scratch formation characteristics of GaAs wafer surface. For the GaAs Materials with anisotropic characteristics, the distribution characteristics of scratches on the surface with different orientations were studied under the same polishing fluid formula and polishing process. It provides theoretical support for inhibiting the formation of scratch on wafer surface and improving the surface polishing quality of semiconductor wafer.